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Direct laser writing (DLW) lithography is a useful way to generate microscopic patterns for lab-on-a-chip devices. We have developed a simple and inexpensive platform for the creation of these initial patterns using a homemade acrylic resin, a 405-nm laser diode, and a fluorescence microscope. To create sub-micrometer linewidths, we included a radical scavenger in the photoresist to quench excessive amounts of radicals generated from laser exposure. In this project, we compared various formulations of the photoresist and we presented a model for the radical polymerization in our photoresist. The model utilized the method of finite differences to numerically solve a system of parabolic partial differential equations describing the diffusive behaviors of particles in the photoresist. The model also made use of Markov chains to simulate the step-wise polymerization of the photoresist. The parameters in the model were determined by fitting the model on experimentally-obtained data.
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Weng, Shuyi, "Using a Radical Scavenger and Modeling the Improvement of Linewidth in One-Photon Direct Laser Writing Lithography" (2014). Senior Projects Spring 2014. 356.